SI9926BDY
SI9926BDY is Dual N-Channel MOSFET manufactured by Kexin Semiconductor.
Features
- RDS(on) = 0.027 Ω @ VGS = 4.5 V
- RDS(on) = 0.036 Ω @ VGS = 2.5 V.
SOP-8
1.50 0.15
+0.04 0.21 -0.02
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
- Absolute Maximum Ratings Ta = 25℃
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation @TA = 25℃
@TA = 70℃ Thermal Resistance,Junction-to-Ambient Jumction temperature and Storage temperature
Symbol VDS VGS ID IDM
RθJA Tj.Tstg
D1
D2
G1 S1
G2 S2
10 sec
Steady State
±10
-55 to +150
Unit V V A A W W
℃/W ℃
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SSMMDD TTyyppee
SI9926BDY (KI9926BDY)
MOSFET
- Electrical Characteristics Ta = 25℃
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate-Body Leakage
Drain-Source On-State...
