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SI9926BDY - Dual N-Channel MOSFET

Key Features

  • s.
  • RDS(on) = 0.027 Ω @ VGS = 4.5 V.
  • RDS(on) = 0.036 Ω @ VGS = 2.5 V. SOP-8 1.50 0.15 +0.04 0.21 -0.02 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation @TA = 25℃ @TA = 70℃ Thermal Resistance,Junction-to-Ambient Jumction temperature and Storage temperature Symbol VDS VGS ID IDM PD RθJA Tj. Tstg D1 D2 G1 S1 G2 S2 10 sec Stead.

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SSMMDD TTyyppee Dual N-Channel MOSFET SI9926BDY (KI9926BDY) MOSFET ■ Features ● RDS(on) = 0.027 Ω @ VGS = 4.5 V ● RDS(on) = 0.036 Ω @ VGS = 2.5 V. SOP-8 1.50 0.15 +0.04 0.21 -0.02 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation @TA = 25℃ @TA = 70℃ Thermal Resistance,Junction-to-Ambient Jumction temperature and Storage temperature Symbol VDS VGS ID IDM PD RθJA Tj.Tstg D1 D2 G1 S1 G2 S2 10 sec Steady State 20 ±10 8.2 6.2 30 2.0 1.14 1.3 0.72 110 -55 to +150 Unit V V A A W W ℃/W ℃ www.kexin.com.