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SI9926BDY - Dual N-Channel 2.5-V (G-S) MOSFET

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power.

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Datasheet Details

Part number SI9926BDY
Manufacturer Vishay Siliconix
File Size 211.14 KB
Description Dual N-Channel 2.5-V (G-S) MOSFET
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Si9926BDY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.020 at VGS = 4.5 V 0.030 at VGS = 2.5 V ID (A) 8.2 6.7 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETS • Compliant to RoHS Directive 2002/95/EC S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si9926BDY-T1-E3 (Lead (Pb)-free) Si9926BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 8.2 6.2 6.5 4.
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