Datasheet Details
| Part number | Si9926 |
|---|---|
| Manufacturer | Nanxin |
| File Size | 196.42 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet |
 Si9926 Datasheet
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General Description
Ratings min Typ max
5.5 14 29 10.2 8.8 1 3.7 0.7 1.0
Unit
nS nS nS nS nC nC nC V
Typical Characteristics at Ta=250C
2
Si9926
3
Si9926
4
Key Features
- Low On resistance.
- 1.8V drive.
- RoHS compliant. Si9926 Dual N-Channel Enhancement MOSFET Si9926 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm.