Si9926
Si9926 is Dual N-Channel MOSFET manufactured by Nanxin.
Features
- Low On resistance.
- 1.8V drive.
- Ro HS pliant.
Si9926 Dual N-Channel Enhancement MOSFET
Package Dimensions
Specifications
Absolute Maximum Ratings at Ta=250C
Parameter
Symbol
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
VGSS
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Tch
Storage Temperature
Tstg
Conditions
PW≤10u S, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm)
Ratings
20 +12 7.6 30 1.3 1.7 150 -55~+150
Unit
V V A A W W 0C 0C
Electrical Characteristics at Ta=250C
Parameter
Symbol
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate Threshold Voltage
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
V(BR)DSS IDSS IGSS VGS(th)
RDS(ON) RDS(ON)...
