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Si9926 - Dual N-Channel MOSFET

Description

Ratings min Typ max 5.5 14 29 10.2 8.8 1 3.7 0.7 1.0 Unit nS nS nS nS nC nC nC V Typical Characteristics at Ta=250C 2 Si9926 3 Si9926 4

Features

  • Low On resistance.
  • 1.8V drive.
  • RoHS compliant. Si9926 Dual N-Channel Enhancement MOSFET Si9926 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm.

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Datasheet Details

Part number Si9926
Manufacturer Nanxin
File Size 196.42 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet Si9926 Datasheet
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    Features ·Low On resistance. ·1.8V drive. ·RoHS compliant. Si9926 Dual N-Channel Enhancement MOSFET Si9926 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) Ratings 20 +12 7.6 30 1.3 1.
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