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Si9926ADY
New Product
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.030 @ VGS = 4.5 V 0.040 @ VGS = 2.5 V
ID (A)
6 5
D1
D2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View N-Channel MOSFET N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 S1 S2 G1 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
20 "12 6
Steady State
Unit
V
4.8 3.8 30 A 1.0 1.25 0.8 –55 to 150 W _C
ID IDM IS PD TJ, Tstg
5
1.7 2.0 1.
SI9926ADY Datasheet
