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SI9926 - Dual N-Channel MOSFET

Features

  • Dual N-Channel 2.5-V (G-S) MOSFET Absolute Maximum Ratings TA=25 Parameter Drain-source Voltage Gate-source Voltage pulsed Drain Current Continuous Drain Current (TJ = 150 ) a TA = 25 Maximum Power Disspationa TA = 70 TA = 25 TA = 70 Continuous Source Current (Diode Conduction)a Operating Junction and Storage temperature Range Symbol VDS VGS IDM ID PD IS Tj Tstg 10 secs Steady state 20 12 30 6 4.8 5 3.8 2.0 1.25 1.3 0.8 1.7 1 -55 to +150 Unit V V A A W A Thermal Resistance Ratings.

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Datasheet Details

Part number SI9926
Manufacturer KEXIN
File Size 59.76 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SI9926 Datasheet
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    SMD Type Dual N-Channel 2.5-V (G-S) MOSFET SI9926 IC Features Dual N-Channel 2.5-V (G-S) MOSFET Absolute Maximum Ratings TA=25 Parameter Drain-source Voltage Gate-source Voltage pulsed Drain Current Continuous Drain Current (TJ = 150 ) a TA = 25 Maximum Power Disspationa TA = 70 TA = 25 TA = 70 Continuous Source Current (Diode Conduction)a Operating Junction and Storage temperature Range Symbol VDS VGS IDM ID PD IS Tj Tstg 10 secs Steady state 20 12 30 6 4.8 5 3.8 2.0 1.25 1.3 0.8 1.7 1 -55 to +150 Unit V V A A W A Thermal Resistance Ratings Parameter Maximum Junction-to-Ambienta t 10 sec Steady State Maximum Junction-to-Foot (Drain) Steady State Notes a. Surface Mounted on 1''x1'' FR4 Board. Symbol RthJA RthJF Typical 50 80 30 Maximum 62.5 100 40 Unit /W www.
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