Dual N-Channel 2.5-V (G-S) MOSFET
Absolute Maximum Ratings TA=25
Parameter
Drain-source Voltage
Gate-source Voltage
pulsed Drain Current
Continuous Drain Current (TJ = 150 ) a TA = 25
Maximum Power Disspationa
TA = 70 TA = 25
TA = 70 Continuous Source Current (Diode Conduction)a
Operating Junction and Storage temperature Range
Symbol VDS VGS IDM ID
PD IS Tj Tstg
10 secs Steady state
20
12 30 6 4.8 5 3.8 2.0 1.25 1.3 0.8 1.7 1 -55 to +150
Unit V V A A
W A
Thermal Resistance Ratings.
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SMD Type
Dual N-Channel 2.5-V (G-S) MOSFET SI9926
IC
Features
Dual N-Channel 2.5-V (G-S) MOSFET
Absolute Maximum Ratings TA=25
Parameter
Drain-source Voltage
Gate-source Voltage
pulsed Drain Current
Continuous Drain Current (TJ = 150 ) a TA = 25
Maximum Power Disspationa
TA = 70 TA = 25
TA = 70 Continuous Source Current (Diode Conduction)a
Operating Junction and Storage temperature Range
Symbol VDS VGS IDM ID
PD IS Tj Tstg
10 secs Steady state
20
12 30 6 4.8 5 3.8 2.0 1.25 1.3 0.8 1.7 1 -55 to +150
Unit V V A A
W A
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambienta
t 10 sec Steady State
Maximum Junction-to-Foot (Drain) Steady State
Notes
a. Surface Mounted on 1''x1'' FR4 Board.
Symbol RthJA RthJF
Typical
50 80
30
Maximum
62.5 100
40
Unit /W
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SI9926 Datasheet
