Si9926DY Datasheet Dual N-channel 2.5v Specified MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: Si9926DY January 2001 Si9926DY Dual N-Channel 2.5V Specified PowerTrench MOSFET.

Datasheet Details

Part number	Si9926DY
Manufacturer	Fairchild (now onsemi)
File Size	79.94 KB
Description	Dual N-Channel 2.5V Specified MOSFET
Datasheet	Si9926DY-Fairchild.pdf

These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process.

It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).

Applications • Battery protection • Load switch • Power management

6.5 A, 20 V. RDS(ON) = 0.030 Ω @ VGS = 4.5 V RDS(ON) = 0.043 Ω @ VGS = 2.5 V.
Optimized for use in battery protection circuits.
±10 VGSS allows for wide operating voltage range.
Low gate charge D1 D1 D2 D2 SO-8 G1 S1 G2 S2 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous.
Pulsed Power Dissipation for Dual Operation Power Dis.

Brand Logo	Part Number	Description	Manufacturer
	SI9926DY	Dual N-Channel MOSFET	Kexin
	Si9926DY	2.5V Dual N-Channel MOSFET	Vishay
	Si9926DY	Dual N-Channel Enhancement-Mode MOSFET	TEMIC
Nanxin	Si9926	Dual N-Channel MOSFET	Nanxin
	SI9926	Dual N-Channel MOSFET	KEXIN

Part Number	Description