Si9926DY Datasheet | Fairchild Semiconductor

Description These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced Power Trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 10V). Applications - Battery protection - Load switch - Power management Features - 6.5 A, 20 V. RDS(ON) = 0.030 Ω @ VGS = 4.5 V RDS(ON) = 0.043 Ω @ VGS = 2.5 V. - Optimized for use in battery protection circuits - ±10 VGSS allows for wide operating voltage range - Low gate charge D1 D1 D2 D2 SO-8 G1 S1 G2 S2 Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel...