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Si9926DY - Dual N-Channel 2.5V Specified MOSFET

General Description

These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process.

10V).

Battery protection Load switch Power man

Key Features

  • 6.5 A, 20 V. RDS(ON) = 0.030 Ω @ VGS = 4.5 V RDS(ON) = 0.043 Ω @ VGS = 2.5 V.
  • Optimized for use in battery protection circuits.
  • ±10 VGSS allows for wide operating voltage range.
  • Low gate charge D1 D1 D2 D2 SO-8 G1 S1 G2 S2 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed Power Dissipation for Dual Operation Power Dis.

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Full PDF Text Transcription (Reference)

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Si9926DY January 2001 Si9926DY Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V). Applications • Battery protection • Load switch • Power management Features • 6.5 A, 20 V. RDS(ON) = 0.030 Ω @ VGS = 4.5 V RDS(ON) = 0.043 Ω @ VGS = 2.5 V.