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Si9926DY
Dual N-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V) 20
rDS(on) (W) 0.03 @ VGS = 4.5 V 0.04 @ VGS = 2.5 V
SO-8
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
Top View
ID (A) "6 "5.2
D1 D1
D2 D2
G1
G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10-ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS
ID IDM IS
PD TJ, Tstg
20 V
"8
"6
"4.8 A
"20
1.7
2.0
W 1.
Si9926DY Datasheet
