Si9926DY Datasheet | TEMIC Semiconductors

Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) 20 r DS(on) (W) 0.03 @ VGS = 4.5 V 0.04 @ VGS = 2.5 V SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View ID (A) "6 "5.2 D1 D1 D2 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10-ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 20 V "8 "6 "4.8 A "20 W 1.3 - 55 to 150 _C Thermal Resistance Ratings Parameter Symbol Limit Unit...