Si9926DY Datasheet | Vishay

Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) r DS(on) (W) 0.03 @ VGS = 4.5 V 20 0.04 @ VGS = 2.5 V ID (A) "6 "5.2 S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 D1 D1 D2 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 20 "10 "6 "4.8 "20 1.7 2.0 1.3 - 55 to 150 Unit W _C THERMAL RESISTANCE RATINGS Maximum Junction-to-Ambienta Parameter Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70162 S-60715- Rev. F, 01-Feb-99 Symbol Rth...