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Si9926DY
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.03 @ VGS = 4.5 V 20
0.04 @ VGS = 2.5 V
ID (A)
"6 "5.2
S1 1 G1 2 S2 3 G2 4
SO-8 Top View
8 D1 7 D1 6 D2 5 D2
D1 D1
D2 D2
G1
G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS ID IDM
IS PD TJ, Tstg
20 "10 "6 "4.8 "20 1.7 2.0 1.3 –55 to 150
Unit
V
A
W _C
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambienta
Parameter
Notes a.
Si9926DY Datasheet
