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SI9926DY - Dual N-Channel MOSFET

Key Features

  • s.
  • RDS(on) ≤ 0.032 Ω @ VGS = 4.5 V.
  • RDS(on) ≤ 0.045 Ω @ VGS = 2.5 V. TSSOP-8 Unit: mm D1 D2 S1 S2 S1 S2 G1 G2 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA = 25℃ TA = 70℃ Thermal Resistance,Junction-to-Ambient Jumction temperature and Storage temperature Symbol VDS V.

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SMD Type MOSFET Dual N-Channel MOSFET SI9926DY ■ Features ● RDS(on) ≤ 0.032 Ω @ VGS = 4.5 V ● RDS(on) ≤ 0.045 Ω @ VGS = 2.5 V. TSSOP-8 Unit: mm D1 D2 S1 S2 S1 S2 G1 G2 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA = 25℃ TA = 70℃ Thermal Resistance,Junction-to-Ambient Jumction temperature and Storage temperature Symbol VDS VGS ID IDM PD RθJA Tj.Tstg Rating 20 ±10 6.5 20 1.25 0.8 100 -55 to +150 Unit V V A A W W ℃/W ℃ 1 www.kexin.com.