SI9926DY Datasheet | Kexin Semiconductor

Features - RDS(on) ≤ 0.032 Ω @ VGS = 4.5 V - RDS(on) ≤ 0.045 Ω @ VGS = 2.5 V. TSSOP-8 Unit: mm D1 D2 S1 S2 S1 S2 G1 G2 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA = 25℃ TA = 70℃ Thermal Resistance,Junction-to-Ambient Jumction temperature and Storage temperature Symbol VDS VGS ID IDM RθJA Tj.Tstg Rating 20 ±10 6.5 20 1.25 0.8 100 -55 to +150 Unit V V A A W W ℃/W ℃ 1 .kexin..cn SMD Type MOSFET - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate-Body Leakage Drain-Source On-State Resistance - On-State Drain Current - Forward Transconductance - Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage - Symbol Test conditions VDSS VGS = 0 V, ID = 250 μA IDSS VDS = 16V , VGS = 0V VGS(th) VDS = VGS , ID = 250u A IGSS VDS = 0V , VGS = ±8V VGS = 4.5V , ID = 6.5A...