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SI9926DY Datasheet Dual N-channel MOSFET

Manufacturer: Kexin Semiconductor

Overview: SMD Type MOSFET Dual N-Channel MOSFET SI9926DY ■.

Key Features

  • s.
  • RDS(on) ≤ 0.032 Ω @ VGS = 4.5 V.
  • RDS(on) ≤ 0.045 Ω @ VGS = 2.5 V. TSSOP-8 Unit: mm D1 D2 S1 S2 S1 S2 G1 G2 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA = 25℃ TA = 70℃ Thermal Resistance,Junction-to-Ambient Jumction temperature and Storage temperature Symbol VDS V.

Similar Datasheet

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Nanxin Si9926 Dual N-Channel MOSFET Nanxin
Vishay Siliconix Logo SI9926ADY Dual N-Channel 2.5-V (G-S) MOSFET Vishay Siliconix

More Datasheets from Kexin Semiconductor

Part Number Description
SI9926 Dual N-Channel MOSFET
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SI9410DY N-Channel MOSFET
SI9435BDY P-Channel Enhancement MOSFET
SI9435DY P-Channel MOSFET

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