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SIHF12N50C - Power MOSFET

Key Features

  • 560 V VGS = 10 V 48 12 15 Single D.
  • Low Figure-of-Merit Ron x Qg 0.555.
  • 100 % Avalanche Tested.
  • Gate Charge Improved.
  • Trr/Qrr Improved.
  • Compliant to RoHS Directive 2002/95/EC G D S GD S D2PAK (TO-263) G S G D S N-Channel MOSFET.

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www.DataSheet.co.kr SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration TO-220AB TO-220 FULLPAK FEATURES 560 V VGS = 10 V 48 12 15 Single D • Low Figure-of-Merit Ron x Qg 0.