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SIHF510 - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • 100 0.54.
  • Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS.

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Datasheet Details

Part number SIHF510
Manufacturer Vishay
File Size 283.68 KB
Description Power MOSFET
Datasheet download datasheet SIHF510 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF510, SiHF510 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 8.3 2.3 3.8 Single D FEATURES 100 0.54 • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.