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SIHFPE30 - Power MOSFET

Description

Third Generation Power MOSFETs from Vishay provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Dynamic dV/dt Rated.
  • Repetitive Avalanche Rated.
  • Isolated Central Mounting Hole.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

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Full PDF Text Transcription

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Power MOSFET IRFPE30, SiHFPE30 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 800 VGS = 10 V 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Single 3.0 TO-247AC D S D G G S N-Channel MOSFET FEATURES • Dynamic dV/dt Rated • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third Generation Power MOSFETs from Vishay provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices.
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