Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Key Features
Dynamic dV/dt Rating.
175 °C Operating Temperature.
Fast Switching.
Ease of Paralleling.
Simple Drive Requirements.
Compliant to RoHS Directive 2002/95/EC
Available
RoHS.
Full PDF Text Transcription for SIHFZ14 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SIHFZ14. For precise diagrams, and layout, please refer to the original PDF.
Power MOSFET IRFZ14, SiHFZ14 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 11 3.1 5.8 Single 0.20 D TO...
View more extracted text
(nC) Qgd (nC) Configuration 60 VGS = 10 V 11 3.1 5.8 Single 0.20 D TO-220AB G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at
SIHFZ14 Datasheet
