SS2H10 Description
SS2H9, SS2H10 Vishay General Semiconductor High Voltage Surface-Mount Schottky Rectifier High Barrier Technology for Improved High Temperature Performance SMB (DO-214AA) Cathode Anode LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF IR TJ max. Package 2.0 A 90 V, 100 V 75 A 0.65 V 10 μA 175 °C SMB (DO-214AA) Circuit configuration Single.
SS2H10 Key Features
- Low profile package
- Guardring for overvoltage protection
- Ideal for automated placement
- Low power losses, high efficiency
- Low forward voltage drop
- Low leakage current
- High surge capability
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3