SS8P6C Datasheet | Vishay

.Data Sheet.co.kr New Product SS8P5C, SS8P6C Vishay General Semiconductor High Current Density Surface Mount Dual mon-Cathode Schottky Rectifier e SMP ® Series Features - Very low profile - typical height of 1.1 mm - Ideal for automated placement - Low forward voltage drop, low power losses - High efficiency - Low thermal resistance - Meets MSL level 1, per LF maximum peak of 260 °C - AEC-Q101 qualified J-STD-020, 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 - pliant to Ro HS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 4 A TJ max. 2 x 4.0 A 50 V, 60 V 120 A 20 m J 0.56 V 150 °C Case: TO-277A (SMPC) Molding pound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, Ro HS pliant, and mercial grade Base P/NHM3 - halogen-free, Ro HS pliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters and polarity protection application. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode Operating junction and storage temperature range total device per diode IF(AV) IFSM EAS TJ, TSTG VRRM SYMBOL SS8P5C S85C 50 8.0 4.0 120 20 - 55 to + 150 A m J °C SS8P6C S86C 60 V A UNIT Document Number: 89028 Revision: 17-May-11 For technical questions within your region, please contact one of the following: .vishay. Diodes Americas@vishay., Diodes Asia@vishay., Diodes...