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SUP85N10-10, SUB85N10-10
Vishay Siliconix
N-Channel 100-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
100 0.0105 at VGS = 10 V 0.012 at VGS = 4.5 V
TO-220AB
ID (A) 85a
FEATURES • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC
TO-263
D
DRAIN connected to TAB
GD S Top View SUP85N10-10
ORDERING INFORMATION
Package TO-220AB TO-263
G DS Top View
SUB85N10-10
G
S N-Channel MOSFET
Lead (Pb)-free SUP85N10-10-E3 SUB85N10-10-E3
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 25 °C TC = 125 °C
ID IDM
Avalanche Current Single Pulse Avalanche Energyb
L = 0.
SUB85N10-10 Datasheet
