SUB85N10-10 Description
SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.0105 at VGS = 10 V 0.012 at VGS = 4.5 V TO-220AB ID (A).
SUB85N10-10 Key Features
- TrenchFET® Power MOSFET
- 175 °C Maximum Junction Temperature
- pliant to RoHS Directive 2002/95/EC