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SUD50N03-06P - P-Channel MOSFET

Key Features

  • ID (A)b 84b 59b rDS(on) (W) 0.0065 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier Operation.

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SUD50N03-06P Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A)b 84b 59b rDS(on) (W) 0.0065 @ VGS = 10 V 0.0095 @ VGS = 4.