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SUD50N03-12P - P-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC D GD S Top View Drain Connected to Tab Ordering Information: SUD50N03-12P-E3 (Lead (PB) free) G S N-Channel MOSFET.

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N-Channel 30 V (D-S) MOSFET SUD50N03-12P Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 30 0.0120 at VGS = 10 V 0.0175 at VGS = 4.5 V TO-252 ID (A)a 17.5 14.5 FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC D GD S Top View Drain Connected to Tab Ordering Information: SUD50N03-12P-E3 (Lead (PB) free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Currenta TA = 25 °C TA = 100 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction)a IS Avalanche Current Single Pulse Avalanche Energy L = 0.