SUM110N03-03
FEATURES r DS(on) (W) ID (A)a
110a
0.0025 @ VGS = 10 V
Trench FETr Power MOSFET 175_C Junction Temperature Low Thermal Resistance Package High Threshold Voltage
APPLICATIONS
D Automotive 12-V Boardnet
TO-263
G DRAIN connected to TAB G D S S Ordering Information: SUM110N03-03 N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 m H TC = 25_C TA = 25_C d TC = 25_C TC = 100_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
30 "20 110a 110a 350 70 245 242c 3.75
- 55 to 175
Unit
A m J W _C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material)....
