rDS(on) (W) ID (A)a
110a
0.0025 @ VGS = 10 V
D D D D
D
TrenchFETr Power MOSFET 175_C Junction Temperature Low Thermal Resistance Package High Threshold Voltage.
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SUM110N03-03
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
30
FEATURES
rDS(on) (W) ID (A)a
110a
0.0025 @ VGS = 10 V
D D D D
D
TrenchFETr Power MOSFET 175_C Junction Temperature Low Thermal Resistance Package High Threshold Voltage
APPLICATIONS
D Automotive 12-V Boardnet
TO-263
G DRAIN connected to TAB G D S S Ordering Information: SUM110N03-03 N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.