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SUM110N03-03P - N-Channel 30-V (D-S) 175C MOSFET

General Description

The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS.

55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive.

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Datasheet Details

Part number SUM110N03-03P
Manufacturer Vishay
File Size 181.85 KB
Description N-Channel 30-V (D-S) 175C MOSFET
Datasheet download datasheet SUM110N03-03P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPICE Device Model SUM110N03-03P Vishay Siliconix N-Channel 30-V (D-S), 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.