Datasheet4U Logo Datasheet4U.com

SUM60P05-11LT - P-Channel MOSFET

Features

  • ID (A).
  • 60a.
  • 60a rDS(on) (W) 0.011 @ VGS =.
  • 10 V 0.0175 @ VGS =.
  • 4.5 V D TrenchFETr Power.

📥 Download Datasheet

Datasheet preview – SUM60P05-11LT

Datasheet Details

Part number SUM60P05-11LT
Manufacturer Vishay Siliconix
File Size 76.99 KB
Description P-Channel MOSFET
Datasheet download datasheet SUM60P05-11LT Datasheet
Additional preview pages of the SUM60P05-11LT datasheet.

📁 Similar Datasheet

  • SUM60030E - N-Channel 80V (D-S) MOSFET (Vishay)
  • SUM60061EL - P-Channel MOSFET (Vishay)
  • SUM60F - (SUM60F - SUM90F) FAST RECOVERY RECTIFIER (SSDI)
  • SUM60FSMS - (SUM60FSMS - SUM90FSMS) FAST RECOVERY RECTIFIER (SSDI)
  • SUM60UF - (SUM60UF - SUM90UF) ULTRA FAST RECOVERY RECTIFIER (SSDI)
  • SUM60UFSMS - (SUM60UFSMS - SUM90UFSMS) ULTRA FAST RECOVERY RECTIFIER (SSDI)
  • SUM6K1N - N-Channel MOSFET (SeCoS Halbleitertechnologie)
  • SUM09N20-270 - N-Channel MOSFET (Vishay)
  • SUM10250E - N-Channel MOSFET (Vishay)
  • SUM110N04-2m1P - N-Channel 40-V (D-S) MOSFET (Vishay)
Other Datasheets by Vishay Siliconix

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com SUM60P05-11LT Vishay Siliconix P-Channel 55-V (D-S) MOSFET with Sensing Diode PRODUCT SUMMARY V(BR)DSS (V) –55 FEATURES ID (A) –60a –60a rDS(on) (W) 0.011 @ VGS = –10 V 0.0175 @ VGS = –4.5 V D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS S D Automotive D Industrial D2PAK-5L T1 G D1 T2 D2 1 2 3 4 5 D G D T1 S T2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)d Pulsed Drain Current Continous Diode Current (Diode Conduction)d Avalanche Current Repetitive Avalanche Energyb L = 0.
Published: |