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SUP40N10-35 - N-Channel MOSFET

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Key Features

  • rDS(on) (W) ID (A) 37.5 36.0 0.035 @ VGS = 10 V 0.038 @ VGS = 6 V D TrenchFETr Power.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com SUP40N10-35 New Product Vishay Siliconix N-Channel 105-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 105 FEATURES rDS(on) (W) ID (A) 37.5 36.0 0.035 @ VGS = 10 V 0.038 @ VGS = 6 V D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D Automotive − Motor Drives − 12-V Systems D Note Book PC adaptors TO-220AB D G G D S Top View Ordering Information: SUP40N10-35—E3 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 105 "20 37.5 21.5 75 35 61 107b 3.