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SUP/SUB15P01-52
Vishay Siliconix
P-Channel 8-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.052 @ VGS = –4.5 V –8 0.070 @ VGS = –2.5 V 0.105 @ VGS = –1.8 V
ID (A)
–15 –10 –10.5
TO-220AB
S
TO-263
G
DRAIN connected to TAB G G D S Top View SUP15P01-52 SUB15P01-52 P-Channel MOSFET D S
Top View D
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)c TC = 25_C TC = 125_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
–8 "8 –15 –8.7 –25 –10 5 25d 2.
SUP15P01-52 Datasheet
