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SUP28N15-52 - N-Channel MOSFET

Key Features

  • ID (A) 28 26 rDS(on) (W) 0.052 @ VGS = 10 V 0.060 @ VGS = 6 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized.

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SUP28N15-52 New Product Vishay Siliconix N-Channel 150-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 150 FEATURES ID (A) 28 26 rDS(on) (W) 0.052 @ VGS = 10 V 0.060 @ VGS = 6 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized APPLICATIONS D Primary Side Switch D TO-220AB G DRAIN connected to TAB G D S Top View S N-Channel MOSFET SUP28N15-52 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) L = 0.