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SUP18N15-95 - N-Channel MOSFET

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Features

  • rDS(on) (W) 0.095 @ VGS = 10 V.

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Datasheet Details

Part number SUP18N15-95
Manufacturer Vishay Siliconix
File Size 74.02 KB
Description N-Channel MOSFET
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SUP18N15-95 New Product Vishay Siliconix N-Channel 150-V (D-S) 175_C MOSFET www.datasheet4u.com FEATURES rDS(on) (W) 0.095 @ VGS = 10 V PRODUCT SUMMARY VDS (V) 150 ID (A) 18 17.5 D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D 42-V Automotive Bus 0.100 @ VGS = 6 V TO-220AB D G DRAIN connected to TAB G D S Top View S N-Channel MOSFET SUP18N15-95 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa L = 0.1 mH TC = 25_C TC = 25_C TC = 125_C ID IDM IAR EAR PD TJ, Tstg Symbol VDS VGS Limit 150 "20 18 10.3 25 15 16.
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