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SUP/SUB75N03-04
Vishay Siliconix
N-Channel 30-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
30
rDS(on) (W)
0.004
ID (A)
75a
TO-220AB TO-263
D
G DRAIN connected to TAB DRAIN connected to TAB G D S
G D S Top View SUP75N03-04
Top View SUB75N03-04 S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Avalanche Energy Repetitive Avalanche Energyb Maximum Power Dissipation L = 0.1 mH L = 0.05 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 125_C
Symbol
VGS ID IDM IS IAR EAS EAR PD TJ, Tstg TO-220AB TL
Limit
"20 75a 75a 250 75 75 280 140 187c 3.
SUP75N03-04 Datasheet
