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SUP/SUB75P05-08
New Product
Vishay Siliconix
P-Channel 55-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
–55
rDS(on) (W)
0.008
ID (A)
–75a
TO-220AB
S
TO-263
G DRAIN connected to TAB
G D S Top View SUP75P05-08
G
D S D
Top View SUB75P05-08 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 125_C (TO-263)c TC = 25_C TC = 150_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
–55 "20 –75a –47
Unit
V
A –240 –75 280 250d W 3.
SUP75P05-08 Datasheet
