SUP85N10-10
Overview
- TrenchFET® Power MOSFET
- 175 °C Maximum Junction Temperature
- Compliant to RoHS Directive 2002/95/EC TO-263
- DRAIN connected to TAB GD S Top View SUP85N10-10
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| SUP85N10-10P | Vishay | N-Channel 100 V (D-S) MOSFET |