SUP85N10-10P - N-Channel 100 V (D-S) MOSFET

Vishay

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
TrenchFET® Power MOSFET.
100 % Rg and UIS Tested.
Compliant to RoHS Directive 2002/95/EC.

SUP85N10-10P n-channel 100 v (d-s) mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SUP85N10-10P
Manufacturer	Vishay
File Size	118.24 KB
Description	N-Channel 100 V (D-S) MOSFET
Datasheet	SUP85N10-10P Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SUP85N10-10	N-Channel MOSFET	Vishay Siliconix
SUP85N15-21	N-Channel MOSFET	Vishay Siliconix
SUP85N03-04P	N-Channel MOSFET	Vishay Siliconix
SUP85N03-07P	N-Channel MOSFET	Vishay Siliconix
SUP85N04-04	N-Channel MOSFET	Vishay Siliconix

Other Datasheets by Vishay

Part Number	Description
SUP85N03-3m6P	N-Channel 30-V (D-S) MOSFET
SUP80090E	N-Channel MOSFET
SUP10250E	N-Channel MOSFET
SUP17N25-165	N-Channel MOSFET
SUP40010EL	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SUP85N10-10P Vishay Siliconix N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.010 at VGS = 10 V ID (A) 85d Qg (Typ.) 77 TO-220AB FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Industrial D GD S Top View Ordering Information: SUP85N10-10P-GE3 (Lead (Pb)-free and Halogen-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 70 °C ID Pulsed Drain Current IDM Avalanche Current IAS Single Avalanche Energya L = 0.