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SUV85N03-04P - N-Channel 30-V (D-S) 175C MOSFET

Features

  • rDS(on) (W) ID (A)a 85a 85a D TrenchFETr Power MOSFET D 175_C Junction Temperature 0.0043 @ VGS = 10 V 0.007 @ VGS = 4.5 V.

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Datasheet Details

Part number SUV85N03-04P
Manufacturer Vishay
File Size 44.57 KB
Description N-Channel 30-V (D-S) 175C MOSFET
Datasheet download datasheet SUV85N03-04P Datasheet

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Full PDF Text Transcription

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SUV85N03-04P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 FEATURES rDS(on) (W) ID (A)a 85a 85a D TrenchFETr Power MOSFET D 175_C Junction Temperature 0.0043 @ VGS = 10 V 0.007 @ VGS = 4.5 V APPLICATIONS D Secondary Side DC/DC TO-262 D 1 2 3 G G D S S Top View SUV85N03-04P N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cd TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 30 "20 85a 85a 240 75 280 166c 3.
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