Click to expand full text
SUV90N06-05
Vishay Siliconix
N-Channel 60-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
60
0.0052 at VGS = 10 V
0.0072 at VGS = 4.5 V
TO-262
ID (A) 90a
FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized
APPLICATIONS • Isolated DC/DC Converters
- Primary-Side Switch
D
1 23 G
G DS Top View SUV90N06-05
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
60
V
VGS
± 20
Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current
TC = 25 °C TC = 125 °C
ID
90a 90a
A
IDM
240
Avalanche Current
IAS
75
Single Pulse Avalanche Energyb
L = 0.1 mH
EAS
280
mJ
Maximum Power Dissipationb
TC = 25 °C
350c
TA = 25 °Cd
PD
4.
SUV90N06-05 Datasheet
