SiE830DF Description
N-Channel 30-V (D-S) MOSFET SiE830DF Vishay Siliconix PRODUCT SUMMARY ID (A)a VDS (V) RDS(on) (Ω) Silicon Package Limit Limit Qg (Typ.) 0.0042 at VGS = 10 V 120 30 0.0048 at VGS = 4.5 V 112 50 33 nC 50 Package Drawing .vishay./doc?73398 10 9 8 D GS 7.
SiE830DF Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- Extremely Low Qgd WFET® Technology for Low Switching Losses
- Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
- Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size
- Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
- 100 % Rg and UIS Tested
- pliant to RoHS directive 2002/95/EC