SiHF840 Datasheet | Vishay

FEATURES - Dynamic d V/dt rating - Repetitive avalanche rated Available - Fast switching Available - Ease of paralleling - Simple drive requirements - Material categorization: for definitions of pliance please see .vishay./doc?99912 Note - This datasheet provides information about parts that are Ro HS-pliant and / or parts that are non-Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-220AB IRF840Pb F Si HF840-E3 IRF840 Si HF840 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Peak Diode Recovery d V/dt c TC = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak temperature) d for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 14 m H, Rg = 25 , IAS = 8.0 A (see fig. 12). c. ISD  8.0 A, d I/dt  100 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. LIMIT 500 ± 20 8.0 5.1 32 1.0 510 8.0 13 125 3.5 -55 to +150 300 10...