SiHF840L Datasheet | Vishay

FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Dynamic d V/dt Rating - Repetitive Avalanche Rated - Fast Switching - Ease of Paralleling - Simple Drive Requirements - pliant to Ro HS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The I2PAK (TO-262) is a power package capable of acmodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance. The I2PAK (TO-262) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W. I2PAK (TO-262) Si HF840L-GE3 IRF840LPb F Si HF840L-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya EAS IAR EAR Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25 °C TC = 100 °C PD d V/dt Operating Junction and Storage Temperature Range TJ, Tstg Soldering Remendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 14 m H, Rg = 25 , IAS = 8.0 A (see fig. 12). c. ISD  8.0 A, d I/dt  100 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. LIMIT 500 ± 20 8.0 5.1 32 1.0 510 8.0 13 125 50 3.5 - 55 to + 150 300d UNIT V...