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SiHF840LC - Power MOSFET

Description

This new series of low charge Power MOSFETs achieve signiticantly lower gate charge over conventional MOSFETs.

Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings.

Features

  • Ultra Low Gate Charge.
  • Reduced Gate Drive Requirement.
  • Enhanced 30 V VGS Rating.
  • Reduced Ciss, Coss, Crss.
  • Extremely High Frequency Operation.
  • Repetitive Avalanche Rated.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

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Full PDF Text Transcription

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Power MOSFET IRF840LC, SiHF840LC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 500 VGS = 10 V 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single TO-220AB D 0.85 S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss • Extremely High Frequency Operation • Repetitive Avalanche Rated • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve signiticantly lower gate charge over conventional MOSFETs.
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