SiHF840LCS Datasheet | Vishay

FEATURES - Ultra low gate charge - Reduced gate drive requirement - Enhanced 30 V VGS rating - Reduced Ciss, Coss, Crss - Extremely high frequency operation Available - Repetitive avalanche rated Available - Material categorization: for definitions of pliance please see .vishay./doc?99912 Note - This datasheet provides information about parts that are Ro HS-pliant and / or parts that are non Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information / tables in this datasheet for details DESCRIPTION This series of low charge power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs. These device improvements bined with the proven ruggedness and reliability that characterize Power MOSFETs offer the designer a new power transistor standard for switching applications. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) Si HF840LCS-GE3 IRF840LCSPb F IRF840LCSTRRPBF I2PAK (TO-262) Si HF840LCL-GE3 IRF840LCLPb F - ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a, e Linear Derating Factor Single Pulse Avalanche Energy b, e Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Peak Diode Recovery d V/dt c, e VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C TA = 25 °C VDS VGS ID IDM EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering...