Third generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Key Features
Dynamic dV/dt Rating.
Repetitive Avalanche Rated.
Fast Switching.
Ease of Paralleling.
Simple Drive Requirements.
Compliant to RoHS Directive 2002/95/EC
Available
RoHS.
Full PDF Text Transcription for SiHFBF30 (Reference)
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SiHFBF30. For precise diagrams, and layout, please refer to the original PDF.
Power MOSFET IRFBF30, SiHFBF30 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 900 VGS = 10 V 78 10 42 Single 3.7 D TO...
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gs (nC) Qgd (nC) Configuration 900 VGS = 10 V 78 10 42 Single 3.7 D TO-220AB G S D G ORDERING INFORMATION Package Lead (Pb)-free SnPb S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for all commercial-industrial applications at power
SiHFBF30 Datasheet
