Third generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Key Features
Dynamic dV/dt rating.
Repetitive avalanche rated.
Fast switching
Available.
Ease of paralleling.
Simple drive requirements
Available.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912
Note.
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see.
Full PDF Text Transcription for SiHFBF30S (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SiHFBF30S. For precise diagrams, and layout, please refer to the original PDF.
www.vishay.com SiHFBF30S Vishay Siliconix Power MOSFET D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Confi...
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ODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 900 VGS = 10 V 3.7 78 10 42 Single FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching Available • Ease of paralleling • Simple drive requirements Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.