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SiHFIZ24G - Power MOSFET

Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

Features

  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RoHS.
  • Sink to Lead Creepage Distance = 4.8 mm.

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Datasheet Details

Part number SiHFIZ24G
Manufacturer Vishay Siliconix
File Size 1.55 MB
Description Power MOSFET
Datasheet download datasheet SiHFIZ24G Datasheet
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Power MOSFET IRFIZ24G, SiHFIZ24G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 25 5.8 11 Single 0.10 D TO-220 FULLPAK G GDS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RoHS* • Sink to Lead Creepage Distance = 4.8 mm COMPLIANT • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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