SiHFIZ48G - Power MOSFET

Product Overview

Vishay Siliconix

Datasheet Details

Part number	SiHFIZ48G
Manufacturer	Vishay Siliconix
File Size	1.44 MB
Description	Power MOSFET
Datasheet	SiHFIZ48G Datasheet
Additional preview pages of the SiHFIZ48G datasheet.

Product details

Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

Isolated Package.
High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
Sink to Lead Creepage Distance = 4.8 mm.
175 °C Operating Temperature.
Dynamic dV/dt Rating.
Low Thermal Resistance.
Lead (Pb)-free Available Available RoHS.

📁 Similar Datasheet

SIHFI530G - Power MOSFET (Vishay)
SiHFIB5N65A - Power MOSFET (Vishay)
SiHFIB6N60A - Power MOSFET (Vishay)
SiHFIBC40GLC - Power MOSFET (Vishay)
SiHFIBC40GLC - N-Channel 650V Power MOSFET (VBsemi)
SiHF065N60E - Power MOSFET (Vishay)
SiHF074N65E - Power MOSFET (Vishay)
SIHF12N60E - Power MOSFET (Vishay)

Other Datasheets by Vishay Siliconix

SiHFIZ44G - Power MOSFET
SiHFIZ14G - Power MOSFET
SiHFIZ24G - Power MOSFET
SIHFIZ34G - Power MOSFET
SiHFI510G - Power MOSFET
SiHFI520G - Power MOSFET

Published: Dec 8, 2008 |