SiHFP250 Datasheet | Vishay

Power MOSFET IRFP250, Si HFP250 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (n C) Qgs (n C) Qgd (n C) Configuration 200 VGS = 10 V 140 28 74 Single TO-247AC S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb Features - Dynamic d V/dt Rating - Repetitive Avalanche Rated - Isolated Central Mounting Hole - Fast Switching - Ease of Paralleling - Simple Drive Requirements - pliant to Ro HS Directive 2002/95/EC Available Ro HS- PLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The TO-220AB package is universially preferred for mercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. TO-247AC IRFP250Pb F Si HFP250-E3 IRFP250 Si...