SiHL510 - Power MOSFET

Vishay

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

Dynamic dV/dt Rating.
Repetitive Avalanche Rated.
Logic-Level Gate Drive.
RDS(on) Specified at VGS = 4 V and 5 V.
175 °C Operating Temperature.
Fast Switching.
Ease of Paralleling.
Compliant to RoHS Directive 2002/95/EC Available RoHS.

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SiHL510 power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SiHL510
Manufacturer	Vishay
File Size	721.63 KB
Description	Power MOSFET
Datasheet	SiHL510 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power MOSFET IRL510, SiHL510 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 100 VGS = 5.0 V 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single 0.54 TO-220AB D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.