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SiHL510S - Power MOSFET

General Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The D2PAK (TO-263) is a surface-mount power package capable of accommodating die size up to HEX-4.

Key Features

  • Surface-mount.
  • Available in tape and reel.
  • Dynamic dv/dt rating.
  • Repetitive avalanche rated Available.
  • Logic-level gate drive.
  • RDS(on) specified at VGS = 4 V and 5 V.
  • 175 °C operating temperature Available.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note.
  • This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-co.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com IRL510S, SiHL510S Vishay Siliconix Power MOSFET D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5 V 6.1 2.6 3.3 Single 0.54 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Note a. See device orientation D2PAK (TO-263) IRL510SPbF FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated Available • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature Available • Material categorization: for definitions of compliance please see www.vishay.