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TSAL7200 - GaAs/GaAlAs IR Emitting Diode

Description

TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package.

In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.

Features

  • D Extra high radiant power and radiant intensity D High reliability D Low forward voltage D Suitable for high pulse current operation D Standard T.
  • 1¾ (ø 5 mm) package D Angle of half intensity ϕ = ± 17° D Peak wavelength l p = 940 nm D Good spectral matching to Si photodetectors.

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Datasheet preview – TSAL7200

Datasheet Details

Part number TSAL7200
Manufacturer Vishay Siliconix
File Size 90.84 KB
Description GaAs/GaAlAs IR Emitting Diode
Datasheet download datasheet TSAL7200 Datasheet
Additional preview pages of the TSAL7200 datasheet.

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Full PDF Text Transcription

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U IR Emitting Diode in ø 5 mm (T–1¾ ) GaAs/GaAlAs 4 t Packageee at .D w Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters. .
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