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TSAL7200 Datasheet GaAs/GaAlAs IR Emitting Diode

Manufacturer: Vishay

Overview: U IR Emitting Diode in ø 5 mm (T–1¾ ) GaAs/GaAlAs 4 t Packageee at .

General Description

TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package.

In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.

The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology.

Key Features

  • D Extra high radiant power and radiant intensity D High reliability D Low forward voltage D Suitable for high pulse current operation D Standard T.
  • 1¾ (ø 5 mm) package D Angle of half intensity ϕ = ± 17° D Peak wavelength l p = 940 nm D Good spectral matching to Si photodetectors.