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TSAL7300 - GaAs/GaAlAs IR Emitting Diode

Description

a D .

TSAL7300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, plastic packages.

Features

  • D Extra high radiant power and radiant intensity D Low forward voltage D Suitable for high pulse current operation D Standard T.
  • 1¾ (ø 5 mm) package D Angle of half intensity ϕ = ± 22° D Peak wavelength l p = 940 nm D High reliability D Good spectral matching to Si photodetectors.

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Datasheet Details

Part number TSAL7300
Manufacturer Vishay Siliconix
File Size 92.50 KB
Description GaAs/GaAlAs IR Emitting Diode
Datasheet download datasheet TSAL7300 Datasheet
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U GaAs/GaAlAs 4 t IR Emitting Diode in ø 5 mm (T–1¾ ) Package Description .c om TSAL7300 Vishay Telefunken w w a D . w TSAL7300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters.
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