TSMF3710 Datasheet | Vishay

Description TSMF3710 is a high speed infrared emitting diode in Ga Al As double hetero (DH) technology in a miniature PLCC-2 SMD package. DH technology bines high speed with high radiant power at wavelength of 870 nm. Features - - - - - - - - - - - .. 94 8553 High radiant power High speed tr = 30 ns High modulation band width fc = 12 MHz Peak wavelength λp = 870 nm High reliability e3 Applications - High speed IR data transmission - High power emitter for low space applications - High performance transmissive or reflective sensors Low forward voltage Suitable for high pulse current application Wide angle of half intensity patible with automatic placement equipment EIA and ICE standard package Suitable for infrared, vapor phase and wavesolder process - 8mm tape and reel standard: GS08 or GS18 - Lead (Pb)-free ponent - ponent in accordance to Ro HS 2002/95/EC and WEEE 2002/96/EC Parts Table Part TSMF3710-GS08 TSMF3710-GS18 TSMF3710-GS08 TSMF3710-GS18 Ordering code MOQ: 7500 pc MOQ: 8000 pc Remarks Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient t ≤ 10 sec tp/T = 0.5, tp = 100 µs tp = 100 µs Test condition Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd Rth JA Value 5 100 200 1 170 100 - 40 to + 85 - 40 to + 100 260 450 Unit V m A m A A m W °C °C °C °C K/W Document Number 81088 Rev. 1.3, 21-Feb-07 .vishay. 1 Vishay Semiconductors Basic Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Temp. coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temp. coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temp. coefficient of λp Rise time Fall time Virtual source size IF = 100 m A IF = 100 m A IF = 100 m A IF = 100 m A IF = 100 m A...