Datasheet4U Logo Datasheet4U.com

TSUS5200 - (TSUS5200 - TSUS5202) Infrared Emitting Diode

General Description

TSUS5200 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package.

Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS Infrared remote control and free air transmission systems with low forwa

Key Features

  • Package type: leaded.
  • Package form: T-1¾.
  • Dimensions (in mm): Ø 5.
  • Leads with stand-off.
  • Peak wavelength: λp = 950 nm.
  • High reliability.
  • Angle of half intensity: ϕ = ± 15° 94 8390.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • Good spectral matching with Si photodetectors.

📥 Download Datasheet

Datasheet Details

Part number TSUS5200
Manufacturer Vishay
File Size 138.96 KB
Description (TSUS5200 - TSUS5202) Infrared Emitting Diode
Datasheet download datasheet TSUS5200 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TSUS520 GaAs Infrared Emitting Diodes in 5 mm (T-13/4)Package Vishay Telefunken
TSUS540 GaAs Infrared Emitting Diodes in 5 mm (T-13/4)Package Vishay Telefunken
TSUS4300 Infrared Emitting Diode Vishay Telefunken
TSUS4400 Infrared Emitting Diode Vishay Telefunken
TSUS6202 Infrared Emitting Diode Vishay

Other Datasheets by Vishay

Part Number Description
TSUS5201 (TSUS5200 - TSUS5202) Infrared Emitting Diode
TSUS5202 (TSUS5200 - TSUS5202) Infrared Emitting Diode
TSUS5400 GaAs Infrared Emitting Diodes in 5 mm (T1) Package
TSUS5400 (TSUS5400 - TSUS5402) Infrared Emitting Diode
TSUS5401 (TSUS5400 - TSUS5402) Infrared Emitting Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.net TSUS5200, TSUS5201, TSUS5202 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 15° 94 8390 • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors DESCRIPTION TSUS5200 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package.