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TSUS5201 - (TSUS5200 - TSUS5202) Infrared Emitting Diode

Download the TSUS5201 datasheet PDF. This datasheet also covers the TSUS5200 variant, as both devices belong to the same (tsus5200 - tsus5202) infrared emitting diode family and are provided as variant models within a single manufacturer datasheet.

General Description

TSUS5200 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package.

Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS Infrared remote control and free air transmission systems with low forwa

Key Features

  • Package type: leaded.
  • Package form: T-1¾.
  • Dimensions (in mm): Ø 5.
  • Leads with stand-off.
  • Peak wavelength: λp = 950 nm.
  • High reliability.
  • Angle of half intensity: ϕ = ± 15° 94 8390.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • Good spectral matching with Si photodetectors.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TSUS5200_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TSUS5201
Manufacturer Vishay
File Size 138.96 KB
Description (TSUS5200 - TSUS5202) Infrared Emitting Diode
Datasheet download datasheet TSUS5201 Datasheet

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Other Datasheets by Vishay

Part Number Description
TSUS5200 (TSUS5200 - TSUS5202) Infrared Emitting Diode
TSUS5202 (TSUS5200 - TSUS5202) Infrared Emitting Diode
TSUS5400 GaAs Infrared Emitting Diodes in 5 mm (T1) Package
TSUS5400 (TSUS5400 - TSUS5402) Infrared Emitting Diode
TSUS5401 (TSUS5400 - TSUS5402) Infrared Emitting Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.net TSUS5200, TSUS5201, TSUS5202 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 15° 94 8390 • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors DESCRIPTION TSUS5200 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package.