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TSUS5201 - (TSUS5200 - TSUS5202) Infrared Emitting Diode

This page provides the datasheet information for the TSUS5201, a member of the TSUS5200 (TSUS5200 - TSUS5202) Infrared Emitting Diode family.

Datasheet Summary

Description

TSUS5200 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package.

Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS Infrared remote control and free air transmission systems with low forwa

Features

  • Package type: leaded.
  • Package form: T-1¾.
  • Dimensions (in mm): Ø 5.
  • Leads with stand-off.
  • Peak wavelength: λp = 950 nm.
  • High reliability.
  • Angle of half intensity: ϕ = ± 15° 94 8390.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • Good spectral matching with Si photodetectors.

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Datasheet preview – TSUS5201

Datasheet Details

Part number TSUS5201
Manufacturer Vishay Siliconix
File Size 138.96 KB
Description (TSUS5200 - TSUS5202) Infrared Emitting Diode
Datasheet download datasheet TSUS5201 Datasheet
Additional preview pages of the TSUS5201 datasheet.

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www.DataSheet4U.net TSUS5200, TSUS5201, TSUS5202 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 15° 94 8390 • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors DESCRIPTION TSUS5200 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package.
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