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VSMY7850X01 - High Power Infrared Emitting Diode

General Description

VSMY7850X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance Little Star package.

A 42 mil chip provides outstanding low forward voltage and allows DC operation of the device up to 1 A.

Key Features

  • Package type: surface mount Package form: Little Star® Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5 Peak wavelength:.
  • p = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity:  = ± 60° Low forward voltage Designed for high drive currents: up to 1 A DC and up to 4 A pulses Low thermal resistance: RthJP = 10.

📥 Download Datasheet

Datasheet Details

Part number VSMY7850X01
Manufacturer Vishay
File Size 184.62 KB
Description High Power Infrared Emitting Diode
Datasheet download datasheet VSMY7850X01 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr VSMY7850X01 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • • • • • • Package type: surface mount Package form: Little Star® Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5 Peak wavelength: p = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity:  = ± 60° Low forward voltage Designed for high drive currents: up to 1 A DC and up to 4 A pulses Low thermal resistance: RthJP = 10 K/W Floor life: 4 weeks, MSL 2a, acc.