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VSMY7850X01
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
FEATURES
• • • • • • • • • • • • • • • Package type: surface mount Package form: Little Star® Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5 Peak wavelength: p = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: = ± 60° Low forward voltage Designed for high drive currents: up to 1 A DC and up to 4 A pulses Low thermal resistance: RthJP = 10 K/W Floor life: 4 weeks, MSL 2a, acc.