Datasheet Details
| Part number | VSMY7852X01 |
|---|---|
| Manufacturer | Vishay |
| File Size | 182.97 KB |
| Description | High Power Infrared Emitting Diode |
| Datasheet |
 VSMY7852X01 Datasheet
|
|
|
General Description
VSMY7852X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance Little Star package.
A 20 mil chip provides outstanding low forward voltage and allows DC operation of the device up to 250 mA.
Key Features
- Package type: surface mount Package form: Little Star® Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5 Peak wavelength:.
- p = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: = ± 60° Low forward voltage Designed for high drive currents: up to 250 mA DC and up to 1.5 A pulses Low thermal resistance: RthJP.