VSMY7852X01 Datasheet | Vishay

.Data Sheet.co.kr Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FFeatures - - - - - - - - - - - - - - - Package type: surface mount Package form: Little Star® Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5 Peak wavelength: - p = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity:  = ± 60° Low forward voltage Designed for high drive currents: up to 250 m A DC and up to 1.5 A pulses Low thermal resistance: Rth JP = 15 K/W Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Lead (Pb)-free reflow soldering AEC-Q101 qualified pliant to Ro HS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION VSMY7852X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance Little Star package. A 20 mil chip provides outstanding low forward voltage and allows DC operation of the device up to 250 m A. AAPPLICATIONS - Infrared illumination for CMOS cameras (CCTV) - Driver assistance systems - Machine vision IR data transmission PRODUCT SUMMARY PONENT VSMY7852X01 Ie (m W/sr) 42  (deg) ± 60 - p (nm) 850 tr (ns) 15 Note - Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE VSMY7852X01-GS08 Note - MOQ: minimum order quantity PACKAGING Tape and reel REMARKS MOQ: 2000 pcs, 2000 pcs/reel PACKAGE FORM Little...