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VSMY7852X01 - High Power Infrared Emitting Diode

Datasheet Summary

Description

VSMY7852X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance Little Star package.

A 20 mil chip provides outstanding low forward voltage and allows DC operation of the device up to 250 mA.

Features

  • Package type: surface mount Package form: Little Star® Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5 Peak wavelength:.
  • p = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity:  = ± 60° Low forward voltage Designed for high drive currents: up to 250 mA DC and up to 1.5 A pulses Low thermal resistance: RthJP.

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Datasheet Details

Part number VSMY7852X01
Manufacturer Vishay Siliconix
File Size 182.97 KB
Description High Power Infrared Emitting Diode
Datasheet download datasheet VSMY7852X01 Datasheet
Additional preview pages of the VSMY7852X01 datasheet.

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Full PDF Text Transcription

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www.DataSheet.co.kr VSMY7852X01 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FFEATURES • • • • • • • • • • • • • • • Package type: surface mount Package form: Little Star® Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5 Peak wavelength: p = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity:  = ± 60° Low forward voltage Designed for high drive currents: up to 250 mA DC and up to 1.5 A pulses Low thermal resistance: RthJP = 15 K/W Floor life: 4 weeks, MSL 2a, acc.
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